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Final data
SPP03N60S5 SPB03N60S5
VDS RDS(on) ID
P-TO263-3-2
Cool MOSTM Power Transistor
Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * Ultra low effective capacitances * Improved transconductance
600 1.4 3.2
V A
P-TO220-3-1
Type SPP03N60S5 SPB03N60S5
Package P-TO220-3-1 P-TO263-3-2
Ordering Code Q67040-S4184 Q67040-S4197
Marking 03N60S5 03N60S5
Maximum Ratings Parameter Continuous drain current TC = 25 C TC = 100 C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse I D = 2.4 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR I D = 3.2 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage VGS Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature VGS Ptot T j , T stg 3.2 20 30 38 -55... +150 W C A V 0.2 I D puls EAS Symbol ID 3.2 2 5.7 100 mJ Value Unit A
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2003-10-06
Final data Maximum Ratings Parameter Drain Source voltage slope
V DS = 480 V, I D = 3.2 A, Tj = 125 C
SPP03N60S5 SPB03N60S5
Symbol dv/dt Value 20 Unit V/ns
Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 2) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=3.2A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS
ID=135, VGS=VDS V DS=600V, VGS=0V, Tj=25C, Tj=150C
Symbol min. RthJC RthJA RthJA Tsold -
Values typ. 35 max. 3.3 62 62 260
Unit K/W
C
Values typ. 700 4.5 0.5 1.26 3.4 max. 5.5 600 3.5 -
Unit V
A 1 70 100 1.4 nA
Gate-source leakage current
I GSS
V GS=20V, VDS=0V V GS=10V, ID=2A, Tj=25C Tj=150C
Drain-source on-state resistance RDS(on)
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Final data Electrical Characteristics , at Tj = 25 C, unless otherwise specified Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
V DD=350V, ID=3.2A, V GS=0 to 10V V DD=350V, ID=3.2A
SPP03N60S5 SPB03N60S5
Values min. typ. 1.8 420 150 3.6 35 25 40 15 22.5 max. ns S pF Unit
Symbol g fs Ciss Coss Crss td(on) tr td(off) tf
Conditions
V DS2*I D*RDS(on)max, ID=2A V GS=0V, V DS=25V, f=1MHz
V DD=350V, V GS=0/10V, ID=3.2A, RG=20
-
3.5 7 12.4 8
16 -
nC
V(plateau) V DD=350V, ID=3.2A
V
1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220C, reflow
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Final data Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD t rr Q rr
VGS =0V, I F=IS VR =350V, IF=IS , diF/dt=100A/s
SPP03N60S5 SPB03N60S5
Values min. typ. 1 1000 2.3 max. 3.2 5.7 1.2 1700 V ns C A Unit
Symbol IS I SM
Conditions
TC=25C
Typical Transient Thermal Characteristics Symbol Thermal resistance Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.054 0.103 0.178 0.757 0.682 0.202 K/W Value typ. Thermal capacitance Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00005232 0.0002034 0.0002963 0.0009103 0.002084 0.024 Ws/K Unit Symbol Value typ. Unit
Tj P tot (t)
R th1
R th,n
T case
E xternal H eatsink
C th1
C th2
C th,n T am b
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Final data 1 Power dissipation Ptot = f (TC)
40
SPP03N60S5
SPP03N60S5 SPB03N60S5
2 Safe operating area ID = f ( V DS ) parameter : D = 0 , T C=25C
10 1
W
A
32 28 10 0
Ptot
24 20 16
ID
10 -1 12 8 4 0 0 10 -2 0 10
tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC
20
40
60
80
100
120
C
160
10
1
10
2
TC
10 V VDS
3
3 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T
10
1
4 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS
10
A
K/W
8
10V
20V 12V
ZthJC
10 0
7
ID
6 5
9V
8.5V
4 10 -1 3 2 1 10 -2 -5 10
-4 -3 -2 -1 0
8V 7.5V 7V 6.5V
10
10
10
10
s 10
0 0
5
10
15
V VDS
25
tp
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Final data 5 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 2 A, VGS = 10 V
8
SPP03N60S5
SPP03N60S5 SPB03N60S5
6 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 10 s
8
6
A
RDS(on)
6
5
ID
98% typ
C
5
4
4
3
3
2
2
1
1
0 -60
-20
20
60
100
180
0 0
4
8
12
V
20
Tj
VGS
7 Typ. gate charge VGS = f (QGate ) parameter: ID = 3.2 A pulsed
16
V 0.2 VDS max
SPP03N60S5
8 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s
10 1
SPP03N60S5
A
12 0.8 VDS max
VGS
10 0
8
6
IF
10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 2 4 6 8 10 12 14 16 nC 19 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3
10
4
2
0 0
QGate
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VSD
2003-10-06
Final data 9 Avalanche SOA IAR = f (tAR) par.: Tj 150 C
3.5
SPP03N60S5 SPB03N60S5
10 Avalanche energy EAS = f (Tj) par.: ID = 2.4 A, V DD = 50 V
120
A
Tj(START) =25C
2.5
mJ
2 60 1.5
Tj(START) =125C
40
1 20
0.5
0 -3 10
EAS
-2 -1 0 1 2 4
IAR
80
10
10
10
10
10
s 10 tAR
0 20
40
60
80
100
120
C
160
Tj
11 Drain-source breakdown voltage V(BR)DSS = f (Tj)
720
SPP03N60S5
12 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz
10 4
V
pF
V(BR)DSS
680 660 640 620 600
10 3
Ciss
C
10 2
Coss
10 1 580 560 540 -60 10 0 0
Crss
-20
20
60
100
C
180
10
20
30
40
50
60
70
80
V VDS
100
Tj
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Final data
SPP03N60S5 SPB03N60S5
Definition of diodes switching characteristics
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Final data P-TO-220-3-1
B 10 0.4 3.7 0.2 A 1.270.13 4.44
SPP03N60S5 SPB03N60S5
15.38 0.6
2.8 0.2
C
5.23 0.9
13.5 0.5
3x 0.75 0.1 1.17 0.22 2x 2.54 0.25
M
0.5 0.1 2.510.2
ABC
All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D 2-PAK)
9.98 0.48
0.05
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Final data
Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved.
SPP03N60S5 SPB03N60S5
Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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2003-10-06

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